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2N7002中文资料_最新报价_数据手册下载_CJ (江苏长电/长晶)-场效应管 ...
2N7002场效应管(MOSFET)，CJ(江苏长电/长晶)原厂出品，数量1个N沟道，漏源电压(Vdss)60V，连续漏极电流(Id)115mA，封装SOT-23，价格￥0 ...
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2N7002 N-Channel Enhancement-Mode Vertical DMOS FET Data Sheet
The 2N7002 is a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power han...
www.infineon.com
2N7002_Rev2 - Infineon Technologies
Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated here...
media.digikey.com
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field ...
2N7000 / 2N7002 / NDS7002A N-Channel E hancement Mode Field Effect General Description
www.alldatasheet.com
2N7002 Datasheet (PDF) - Fairchild Semiconductor
2N7002 Datasheet (HTML) - Fairchild Semiconductor 2N7002 Product details Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technol...
www.onsemi.com
2N7002T - N‐Channel Enhancement Mode Field Effect Transistor
Parameter Symbol Max Unit 2N7002T SOT-523FL 3000 / Tape & Reel (Pb-Free) Total Device Dissipation PD 200 mW Derating above TA = 25 °C 1.6 mW/°C †For information on tape and reel specifications, including part orientat...
www.diodes.com
2N7002 - diodes.com
Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.