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Part #: 60N321. Download. File Size: 173Kbytes. Page: 6 Pages. Description: Insulated Gate Bipolar Transistor Silicon N Channel IGBT.
Size:178K toshiba gt60n321.pdf pdf_icon. GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching ...
Jan 7, 2010 ... Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the.
High-quality GT60N321 TO-3P integrated circuit, 1 piece per lot. Ideal for electronic projects. Available in stock. Search for 2sd1525 compatible parts.
WFM50-60N321 | WFM. FORK SENSORS. Illustration may differ. Ordering information ... WFM50-60N321 | WFM. FORK SENSORS. NPN: HIGH = approx. VS / LOW ≤ 1.5 V.
60N321 datasheet by Toshiba Semiconductor. GT60N321. File size: 182.32 KB. View specifications and download PDF.
Description TOSHIBA GT60N321 is a Silicon N-Channel Insulated Gate Bipolar Transistor with Low saturation voltage VCE (sat) is 2.3 V (Typ.) (IC = 60 A).
FRD included between emitter and collector. • Enhancement mode type. • High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A). FRD : trr = 0.8 µs (typ.) ...
60N321 Datasheet. Part #: GT60N321. Datasheet: 173Kb/6P. Manufacturer: Toshiba Semiconductor. Description: Insulated Gate Bipolar Transistor Silicon N ...
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