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This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to...
9N90C Datasheet: MOSFET/N-Ch/900V/9A. View the complete specification and find equivalents, replacement transistors, pin configuration.
场效应管 (MOSFET) 9N90由GOFORD (谷峰)设计生产,立创商城现货销售,正品保证,参考价格¥2.47,封装为TO-3P。 商城还提供9N90专业规格书、详细参数、引脚图、PCB焊盘图,典型应用图,Datasheet数据手册等资料查询和免费下载。
Mar 22, 2024 · 9n90c场效应管参数,9n90参数 漏源电压:900V 栅源电压:±30V 漏电流连续:9.0A 脉冲漏极电流:36A 雪崩能量:900mJ 耗散功率:280W 热电阻:40℃/W 漏源击穿电压:900V 栅极阈值电压:3.0V 输入电容:2780 PF 输出电容:228 PF 上升时间:130 ns 封装形式:TO-3P、247、220F
9N90C Datasheet. Part #: FQA9N90C. Datasheet: 680Kb/8P. Manufacturer: Fairchild Semiconductor. Description: 900V N-Channel MOSFET. 15 Results. Datasheet: 798Kb/9P. Manufacturer: Fairchild Semiconductor.
这款MOSFET具有较高的漏极-源极击穿电压(通常为900V)和良好的导通电阻特性,使其适用于需要高效能和高可靠性的电源系统。 9N90C采用TO-220或TO-263等封装形式,便于散热和安装。
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are w...