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Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, f...
Part #: IRFP2907Z. Download. File Size: 311Kbytes. Page: 9 Pages. Description: AUTOMOTIVE MOSFET. Manufacturer: International Rectifier.
IRFP2907Z Transistor Datasheet, IRFP2907Z Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
iscN-ChannelMOSFETTransistor IRFP2907Z，IIRFP2907Z ·FEATURES ·Staticdrain-sourceon-resistance: RDS(on)≤4.5mΩ ·Enhancementmode: ·100%avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoper...
IRFP2907Z 是一款 N 沟道功率 MOSFET，其最大 VDS：75 V，最大 RDS (on)：4.5 mOhm，封装：TO-247，技术：Trench Mosfet，最大 ID：120 A
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this d...
IRFP2907Z is a N-channel power MOSFETs with VDS max: 75 V, RDS (on) max: 4.5 mOhm, Package: TO-247, Technology: Trench Mosfet, ID max: 120 A
IRFP2907Z Infineon MOS管芯片中文资料PDF, 共 (10)页, IRFP2907Z数据手册有芯片封装TO-247和参数资料。
International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. The company was founded in 1947 and was headquartered in El Seg...
立创商城提供Infineon公司生产的IRFP2907ZPBF详细信息，包括中文资料、PDF数据手册、引脚图、商品实物图和购买链接等信息，采购IRFP2907ZPBF就上立创商城。
