BS107,BS107...
VN2010L/BS107 Ohmic Region Characteristics V GS = 10 V 50 5V I D - Drain Current (mA) 4V 6V 3V 40 Typical Characteristics (25_C Unless Otherwise Noted) 0.5 0.4 Output Characteristics for Low Gate Drive T J = 25°C V GS...
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VN2010L/BS107 Ohmic Region Characteristics V GS = 10 V 50 5V I D - Drain Current (mA) 4V 6V 3V 40 Typical Characteristics (25_C Unless Otherwise Noted) 0.5 0.4 Output Characteristics for Low Gate Drive T J = 25°C V GS...
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Part #: BS107. Download. File Size: 45Kbytes. Page: 4 Pages. Description: N-Channel 200-V (D-S) MOSFETs. Manufacturer: Vishay Siliconix.
在半导体上,提供了广泛的电力管理,模拟和离散半导体的组合,包括电源MOSFET,二极管,整流器,电压调节器等。 该公司的产品旨在具有节能,可靠和成本效益,并用于多种应用,包括便携式电子产品,工业自动化系统,可再生能源系统和汽车电子产品。
http://onsemi.com 250 mAMPS 200 VOLTS RDS(on) = 14 W (BS107) RDS(on) = 6.4 W (BS107A)
Nov 29, 2022 · 晶体管极性:N-Channel 电阻汲极/源极RDS(导通):14Ohms 正向跨导gFS(最大值/最小值):0.0004S 汲极/源极击穿电压:200V 闸/源击穿电压:+/-20V 漏极连续电流:250mA 功率耗散:0.35W 最大工作温度:+150C 安装风格:ThroughHole 封装/箱体:TO-92 封装:Bulk 最小工作温度:-55C
TO-92 CASE 29-11 STYLE 30 xxx A = BS107 or BS107A = Assembly Location Y = Year WW = Work Week = Pb-Free Package (Note: Microdot may be in either location)
产品 分立器件和功率模块 MOSFET 小信号MOSFET Small Signal MOSFETs | BS107 小信号 MOSFET,200V,250mA,14 Ω,单 N 沟道,TO-92 已停产 相似产品推荐
View datasheets for BS107, BS107A by ON Semiconductor and other related components here.
Semiconductor Components Industries, LLC, 2014 1 June, 2014 − Rev. 7 Publication Order Number: BS107/D