BSS84中文资料_最新报价_数据手册下载_CJ(江苏长电/长晶)-场效应管(MO...
场效应管 (MOSFET)BSS84,CJ (江苏长电/长晶)原厂,封装SOT-23。 高清引脚图、PCB焊盘图、3D模型、Datasheet数据手册,¥0.0676 正品现货,立创商城一站式元器件采购。
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场效应管 (MOSFET)BSS84,CJ (江苏长电/长晶)原厂,封装SOT-23。 高清引脚图、PCB焊盘图、3D模型、Datasheet数据手册,¥0.0676 正品现货,立创商城一站式元器件采购。
BSS84 General Description This P−channel enhancement−mode field−effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process minimizes on−state resistanc...
Description and Applications This MOSFET has been designed to minimize on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
该款消费级P沟道MOSFET采用SOT-23封装,专为50V电压应用设计,额定电流0.1A。具备低导通电阻和快速开关特性,尤其适用于电池保护、信号切换等精细功率控制场合,实现电子设备高效节能的运作。
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Product data sheet Rev. 06 — 16 December 2008 3 of 11 NXP Semiconductors BSS84 P-channel enhancement mode vertical DMOS transistor
半导小芯为您提供 BSS84 长晶科技-JSCJ 的资料查询:长晶科技-JSCJ数据手册查询,长晶科技-JSCJ规格书查询,长晶科技-JSCJ datasheet查询,长晶科技-JSCJ IC查询、半导体查询、长晶科技-JSCJ芯片查询、长晶科技-JSCJ替代型号查询、长晶科技-JSCJ产品、长晶科技-JSCJ应用等 ...
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with...
BSS84 Pch -60V -0.23A 小信号MOSFET BSS84在SOT-23封装中内置单Pch -60V -0.23A MOSFET和ESD保护二极管。 适合高边负载开关、开关电路、继电器驱动器用途。
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal,...