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The BU508AF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.
BU508AF – Bipolar (BJT) Transistor NPN 700 V 8 A 50 W Through Hole TO-3PF from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
BU508AF Datasheet. Find the spec. Find the substitute. Equivalents, pinouts, smd-codes, technical parameters.
The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.
三极管 (BJT) BU508AF由ST (意法半导体)设计生产,立创商城现货销售,正品保证,参考价格¥7.16784,封装为TO-3PF。 商城还提供BU508AF专业规格书、详细参数、引脚图、PCB焊盘图,典型应用图,Datasheet数据手册等资料查询和免费下载。
Part #: BU508AF. Download. File Size: 61Kbytes. Page: 7 Pages. Description: Silicon Diffused Power Transistor. Manufacturer: NXP Semiconductors.
The BU508AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage.