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Description The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
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Description The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
晶体管输出光耦 EL817C由AOTE(奥特)设计生产,立创商城现货销售,正品保证,参考价格¥0.1188,封装为DIP-4。商城还提供EL817C专业规格书、详细参数、引脚图、PCB焊盘图,典型应用图,Datasheet数据手册等资料查询和免费下载。
如果 正向有压降,则反向切断,则说明前端发光二极管正常。 在输入端接一个低压6V (以4N35为例,具体输入电压以数据手册为准),并串接保护电阻,用万用表调节到电阻量程,测量另一个输出端的电阻值。
The EL817 series contains a infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
EL817光耦是一款特别常见且应用广泛的基础光耦,在多功能网关设备上应用非常契合的一款光耦。 EL817光耦参数: 类型:光电耦合器 反向重复峰值电压(VRRM):6 V 连续正向电流(IF):0.05 A 正向电压降(VF):1.4 V 【连续正向电流(IF)=0.02 A】 反向漏电流(IR):10 μA 集电极电流(IC):0.05 A ...
台湾亿光(EVERLIGHT)电子工业股份有限公司18年优秀一级授权代理商,专业销售台湾亿光电子全系列光电半导体元器件产品。
隔离电压:发光管和光敏三极管的隔离电压的最小值。 光耦的技术参数主要有发光二极管正向压降VF、正向电流IF、电流传输比CTR输入级与输出级之间的绝缘电阻、集电极-发射极反向击穿电压V(BR)CEO集电极-发射极饱和压降VCE(sat)。
May 21, 2020 · View EL817 Series by Everlight Electronics Co Ltd datasheet for technical specifications, dimensions and more at DigiKey.
The EL817 series contains a infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
晶体管输出光耦 EL817(A)由EVERLIGHT(亿光)设计生产,立创商城现货销售,正品保证,参考价格¥0.3508,封装为DIP-4。商城还提供EL817(A)专业规格书、详细参数、引脚图、PCB焊盘图,典型应用图,Datasheet数据手册等资料查询和免费下载。