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檔案大小: 1MB 頁面計數: 20 These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction a...
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise …
2022年2月5日 · These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an …
来自 STMicroelectronics 的 STGW60V60DF – IGBT 沟槽型场截止 600 V 80 A 375 W 通孔 TO-247-3。 DigiKey 提供数以百万计电子元器件的定价和供应信息。
2021年7月4日 · Ab solu te ma ximum r ati ngs. 1. Current level is limited by bond wires. 2. Pulse width limited by ma ximum junction temperature. T able 3. Thermal data. = 25 °C un less …
GW60V60DF 产品详情 Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE (sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe …
STGW60V60DF STMicroelectronics 绝缘栅双极晶体管 (IGBT) 600V 60A High Speed Trench Gate IGBT 数据表, 库存, 价格.
Trench gate field-stop IGBT: features, pinout, electrical characteristics, block diagram, and absolute ratings.
