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IRF634A Datasheet (HTML) - Fairchild Semiconductor IRF634A Product details FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operati...
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Type Designator: IRF634A 📄 📄 Type of Transistor: MOSFET Type of Control Channel: N-Channel Absolute Maximum Ratings Pd ⓘ - Maximum Power Dissipation: 74 W |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V |Vgs|ⓘ - Maximum ...
IRF634A Advanced Power MOSFET datasheet by Samsung Semiconductor. View pinout, features, specifications.
Part #: IRF634A. Download. File Size: 224Kbytes. Page: 7 Pages. Description: Advanced Power MOSFET. Manufacturer: Fairchild Semiconductor.
STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland. The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and int...
IRF634A Advanced Power MOSFET FEATURES. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10µA (Max.) @ VDS = 250...
