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场效应管 (MOSFET) ME20N10-JSM由JSMSEMI (杰盛微)设计生产，立创商城现货销售，正品保证，参考价格￥1.025472，封装为TO-252。商城还提供ME20N10-JSM专业规格书、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond tho...
ME20N10 Datasheet: MOSFET/N-Ch/100V/15A. View the complete specification and find equivalents, replacement transistors, pin configuration.
Part #: ME20N10. Download. File Size: 1,009Kbytes. Page: 7 Pages. Description: N-Channel 100 V (D-S) MOSFET. Manufacturer: VBsemi Electronics Co.,Ltd.
The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state re...
ME20N10 DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to ...
ME20N10是一款N沟道增强型金属氧化物半导体场效应晶体管（MOSFET），适用于多种开关和功率管理应用。该器件具有低导通电阻、高击穿电压和快速开关速度的特点，广泛用于消费电子、工业控制和汽车电子领域。
世强硬创平台提供ME20N10-VB样品申请服务，支持工程师在研发初期快速获取器件用于功能验证与兼容性测试；样品将由原厂审核，世强协助申请，物流全程可追踪，助力加速原型开发与方案选型。
ME20N10-VB是一款N溝道MOSFET，適用於多種電子模組和應用，特別是在需要中等電流開關和適度導通電阻的情況下。
标签： 来源：国产品牌站作者：szvbsemi时间：2024-02-22 10:52 摘要： ME20N10.pdf ME20N10.pdf 型号：ME20N10-VB 丝印：VBE1101M 品牌：VBsemi 参数：N沟道,100V,18A,RDS (ON),115mΩ@10V,121mΩ@4.5V,20Vgs (±V)；1.6Vth (V)；TO252 封装：TO252 详细参数说明： - 型号：ME20N10-VB - 丝...
