fqpf8n80c-d.pdf - onsemi
* Drain current limited by maximum junction temperature. Symbol. Parameter. FQP8N80C. FQPF8N80C. Unit. VDSS. Drain-Source Voltage. 800.
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* Drain current limited by maximum junction temperature. Symbol. Parameter. FQP8N80C. FQPF8N80C. Unit. VDSS. Drain-Source Voltage. 800.
Order today, ships today. FQPF8N80C – N-Channel 800 V 8A (Tc) 59W (Tc) Through Hole TO-220F-3 from onsemi. Pricing and Availability on millions of ...
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C0. Page 2. F. QP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel MOSFET. 2. Electrical Characteristics TC = 25°C unless ...
* Drain current limited by maximum junction temperature. Thermal Characteristics. Symbol. Parameter. FQP8N80C. FQPF8N80C. Units. VDSS. Drain- ...
* Drain current limited by maximum junction temperature. Thermal Characteristics. Symbol. Parameter. FQP8N80C. FQPF8N80C. Units. VDSS. Drain- ...
Offers a high-performance trench technology for extremely low RDS(on) and fast switching speed. Learn More about FDC642P-F085 Small Signal MOSFET · No ...
FQPF8N80C New energy vehicles transistor automotive computer board chip. FQPF8N80C IC is designed to replace faulty components in car computer boards, ...
General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, ...
FQPF8N80C Datasheet: MOSFET/N-Ch/800V/8A. View the complete specification and find equivalents, replacement transistors, pin configuration.
Buy 10PCS FQPF8N80C 8N80C TO-220 8N80 TO220 MOS FET tr new original at Aliexpress for . Find more 502, 400103 and 4001 products.